Understanding the Input Signal Frequency Effects on the Resistive Window
of Memristors
Abstract
As theoretically predicted by Prof. Chua, the input signal frequency has
a major impact on the electrical behavior of memristors. According with
one of the so-called fingerprints of such devices, the resistive window,
i.e. the difference between the low and high resistance states,
shrinks as the frequency increases for a given input signal amplitude.
Physically, this effect stems from the incapability of ions/vacancies to
follow the external electrical stimulus. In terms of the electrical
behavior, the collapse of the resistive window can be ascribed to the
shift of the set/reset voltages toward higher values. Moreover, for a
given frequency, the resistance window increases with the signal
amplitude. In this letter, we show that both phenomena are the two sides
of the same coin and that can be consistently explained after
considering the snapback effect and a balance model equation for the
device memory state.