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Roadmap of Ferroelectric Memories: From Discovery to 3D Integration
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  • Sourav De ,
  • Maximilian Lederer ,
  • Yannick Raffel ,
  • Franz Müller ,
  • David Lehninger ,
  • Ayse Sunbul ,
  • stefan duenkel ,
  • Tarek Ali ,
  • Halid Mulaosmanovic ,
  • Aftab Baig ,
  • Bhaswar Chakrabarti ,
  • sven beyer ,
  • Tian-Li Wu ,
  • Johannes Mueller ,
  • Darsen D. Lu ,
  • Konrad Seidel ,
  • Thomas Kaempfe
Sourav De
Fraunhofer-Institut für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies (CNT)

Corresponding Author:[email protected]

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Maximilian Lederer
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Yannick Raffel
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Franz Müller
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David Lehninger
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Ayse Sunbul
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stefan duenkel
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Tarek Ali
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Halid Mulaosmanovic
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Aftab Baig
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Bhaswar Chakrabarti
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sven beyer
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Tian-Li Wu
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Johannes Mueller
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Darsen D. Lu
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Konrad Seidel
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Thomas Kaempfe
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Abstract

The versatility of hafnium oxide-based ferroelectric memories to function as a storage class memory, a synaptic device for neuromorphic implementation, and a device capable of high-density integration have made them attractive candidates for next-generation technology. Ferroelectric memories have been increasingly popular with the discovery of ferroelectricity in hafnium oxide at a shallow thickness and compatibility with complementary metal-oxide-semiconductor-compatible processes. The single transistor-based ferroelectric cell makes them ideal for non-volatile embedded memory solutions, bridging the gap between on-chip SRAM and external data storage (e.g. Flash). This paper begins with discovering ferroelectricity in Rochelle salt and discusses the neoteric progress up to successful integration with 3D memory.