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Device-Circuit Co-design of Memristor-based on Niobium Oxide for Large-Scale Crossbar Memory
  • Avinash Kumar ,
  • Mani Shankar Yadav ,
  • Brajesh Rawat
Avinash Kumar
Indian Institute of Technology Ropar

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Mani Shankar Yadav
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Brajesh Rawat
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Memristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing; however, the sneak current through the unselected cells becomes a fundamental roadblock for their development as it results in misreading and high power consumption. In this regard, we investigate Pt/Ti/NbO2/Nb2O5−x/Pt-based self-selective memristor, which combines inherent nonlinearity of NbO2 switching layer and non-volatile operation of Nb2O5−x memory layer in a single device. The results show that Pt/Ti/NbO2/Nb2O5−x/Pt memristor offers the sneak current of 310 nA, selectivity of around 174, and on/off current ratio of 4.79 compared to the sneak current of around 70 µA, selectivity of about 4.02, and on/off current ratio of around 1.55 for Pt/Ti/Nb2O5−x/Pt-based memristor. Our self-selective memristor minimizes the sneak current, but a small on/off current ratio limits their readout margin and power efficiency for crossbar array size greater than 212. Further, we demonstrate that breaking down a large-scale crossbar array into smaller subarrays and separating them by transistor switches is a more efficient way of eliminating the sneak current. The memristor-transistor split crossbar architecture essentially provides the readout margin and power efficiency of subarray for large size crossbar array and allows high-density array integration over 1Transistor-1Memristor architecture.