loading page

Mm-wave Dual-Mode Patch Filters on 55-nm BiCMOS
  • +4
  • Mohammed Wehbi ,
  • Marc Margalef-Rovira ,
  • Sylvie Lepilliet ,
  • Loïc Vincent ,
  • Abdelhalim A. Saadi ,
  • Hamza Issa ,
  • Philippe Ferrari
Mohammed Wehbi
University Grenoble Alpes

Corresponding Author:[email protected]

Author Profile
Marc Margalef-Rovira
Author Profile
Sylvie Lepilliet
Author Profile
Loïc Vincent
Author Profile
Abdelhalim A. Saadi
Author Profile
Hamza Issa
Author Profile
Philippe Ferrari
Author Profile


In this paper, the patch concept is applied to the design of millimeter-wave band-pass filters in BiCMOS 55 nm technology. The operation frequencies are 120 GHz and 200 GHz, respectively. A via- and slot-based approach makes filters very compact, albeit patch-based, through a multi-mode approach. At 200 GHz, the side of the patch is only 194 μm long, or about a quarter wavelength, compared to half a wavelength for a conventional patch. The dependence of performance on the thickness of the Back-End-Of-Line is studied, and the design method is detailed. The performance is very good, with for example a filter operating at 200 GHz with a relative bandwidth of 23% and insertion loss of 3 dB. Finally, the prospect of using a thicker Back-End-Of-Line, offered as an option in 55-nm BiCMOS technology, makes it possible to show that even better performance can be achieved, with insertion loss below 3 dB.