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Ultra-Low Reverse Leakage in Large Area Kilo-Volt class β-Ga2O3 Trench Schottky Barrier Diode with High-k Dielectric RESURF
  • Saurav Roy
Saurav Roy
University of California Santa Barbara

Corresponding Author:[email protected]

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We present our findings on the utilization of a high permittivity dielectric, RESURF, in β-Ga2O3 trench Schottky barrier diodes. Our research demonstrates the achievement of ultra-low reverse leakage current in both small -scale and large-scale devices, with a breakdown voltage exceeding 1kV, thanks to the high-k RESURF technology. Furthermore, we assess the switching performance of these large-area devices and illustrate their competitive standing when compared to state-of-the-art commercial SiC devices. Additionally, we provide evidence of the superior thermal stability exhibited by high-k trench devices in comparison to SiC devices.