loading page

RESURF Ga2O3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage
  • +1
  • Junting Chen,
  • Junlei Zhao,
  • Jin Wei,
  • Mengyuan Hua
Junting Chen
The Hong Kong University of Science and Technology, Southern University of Science and Technology
Junlei Zhao
Southern University of Science and Technology
Author Profile
Jin Wei
Peking University
Mengyuan Hua
Southern University of Science and Technology

Corresponding Author:


Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga2O3 devices. In this simulation work, we propose a novel role for p-type available heterosubstrates, as a component of a reduced surface field (RESURF) structure in Ga2O3 lateral field-effect transistors (FETs). The RESURF structure can eliminate the electric field crowding and contribute to higher breakdown voltage. Using SiC as an example, the designing strategy for doping concentration and dimensions of the p-type region is systematically studied using TCAD modeling. To mimic realistic devices, the impacts of interface charge and binding interlayer at the Ga2O3 /SiC interface are also explored. Additionally, the feasibility of the RESURF structure for high-frequency switching operation is supported by the short time constant (∼0.5 ns) of charging/discharging the p-SiC depletion region. This study demonstrates the great potential of utilizing the electrical properties of heat-dissipating heterosubstrates to achieve a uniform electric field distribution in Ga2O3 FETs.
18 Jan 2024Submitted to TechRxiv
26 Jan 2024Published in TechRxiv