Abstract

The feasibility of memristor devices as a controllable resistor element for making tunable analogue filters is investigated by employing the Stanford Resistive Random Access Memory (RRAM) memristor model. Replacing the resistor in a conventional filter with a memristor allows the filter to have a variable range, this would solve the limitation where the conventional analogue filters have only a single filter range due to the fixed values of their constituent elements. This paper reports the results of fitting the Al: HfO2 memristor using the Stanford RRAM model, and the fitted results can be perfectly matched to real experimental results. Memristor-based filters can obtain at least two different filter ranges with the same filtering effect as conventional filters.