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1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs

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posted on 03.07.2020 by Ruben Asanovski, Luca Selmi, Pierpaolo Palestri, Enrico Caruso
We derive an analytical model for 1/f noise in MOSFETs, highlighting a term that is often neglected in literature but becomes important for ultra-thin oxides. Furthermore, we identify an interesting relationship between the thermal noise of the gate impedance and the gate noise due to trapping/detrapping between the free carriers in the channel and the oxide traps, as well as the 1/f noise cross-correlation between drain and gate, showing that a single voltage noise generator is not enough to describe completely the 1/f noise. TCAD simulations are used to verify the model predictive capabilities.

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Email Address of Submitting Author

ruben.asanovski@hotmail.it

Submitting Author's Institution

Università degli Studi di Modena e Reggio Emilia

Submitting Author's Country

Italy

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