Abstract
We derive an analytical model for 1/f noise in MOSFETs, highlighting a
term that is often neglected in literature but becomes important for
ultra-thin oxides. Furthermore, we identify an interesting relationship
between the thermal noise of the gate impedance and the gate noise due
to trapping/detrapping between the free carriers in the channel and the
oxide traps, as well as the 1/f noise cross-correlation between drain
and gate, showing that a single voltage noise generator is not enough to
describe completely the 1/f noise. TCAD simulations are used to verify
the model predictive capabilities.