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f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs
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  • Ruben Asanovski ,
  • Luca Selmi ,
  • Pierpaolo Palestri ,
  • Enrico Caruso
Ruben Asanovski
Università degli Studi di Modena e Reggio Emilia

Corresponding Author:[email protected]

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Luca Selmi
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Pierpaolo Palestri
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Enrico Caruso
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We derive an analytical model for 1/f noise in MOSFETs, highlighting a term that is often neglected in literature but becomes important for ultra-thin oxides. Furthermore, we identify an interesting relationship between the thermal noise of the gate impedance and the gate noise due to trapping/detrapping between the free carriers in the channel and the oxide traps, as well as the 1/f noise cross-correlation between drain and gate, showing that a single voltage noise generator is not enough to describe completely the 1/f noise. TCAD simulations are used to verify the model predictive capabilities.