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Novel low-temperature interconnects for 2.5/3D MEMS integration: demonstration and reliability
  • +1
  • Fahimeh Emadi,
  • Vesa Vuorinen,
  • Shenyi Liu,
  • Mervi Paulasto-Kröckel
Fahimeh Emadi

Corresponding Author:

Vesa Vuorinen
Shenyi Liu
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Mervi Paulasto-Kröckel


In response to the evolving demands of microelectromechanical system (MEMS) integration, aiming to achieve high-performance electronic products, innovative interconnect solutions are becoming essential. The interconnects must possess key features, including the capability for miniaturization, low processing temperatures, and the ability to maintain a stable microstructure with optimized electrical, mechanical, and thermomechanical properties. To meet these demands, this study designed a novel Cu-Sn-based solid-liquid interdiffusion (SLID) interconnect. The study involved the implementation of a metallization stack, incorporating Co as a layer to interact with low-temperature Cu-Sn-In SLID and form intermetallic compounds (IMCs). Since Cu6(Sn,In)5 forms at a lower bonding temperature than other phases commonly observed in the Cu-Sn-In system, the study aimed to develop interconnects comprising a stable single-phase (Cu,Co)6(Sn,In)5. Bonding conditions were established for the Cu-Sn-In/Co system and the Cu-Sn/Co system as a reference. Thorough assessments of their thermomechanical reliability were conducted through hightemperature storage (HTS), thermal shock (TS), and tensile tests. The Cu-Sn-In/Co system emerged as a reliable low-temperature solution with the following key attributes: 1) a reduced bonding temperature compared to the Cu-Sn SLID interconnects, 2) the absence of the Cu3Sn phase and resulting void-free interconnects, and 3) high thermomechanical reliability, particularly following thermal annealing after bonding.
15 Apr 2024Submitted to TechRxiv
18 Apr 2024Published in TechRxiv